Ultrafast Graded Double-Heterostructure p-i-n Photodiode,
Abstract
A 5 micro x 5 micron double heterostructure InGaAs/InP pin photodiode is reported with a measured response of 5 ps and a deconvolved device impulse response of 3.8 ps. The double heterostructure employed reduces carrier diffusion and the graded heterobarriers play a key role in optimizing the device response speed by minimizing charge storage and device series resistance.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007647
Entities
People
- D. L. Crawford
- J. E. Bowers
- K. Giboney
- M.J.W. Rodwell
- Y. G. Wey
Organizations
- University of California, Santa Barbara