Picosecond Metal-Semiconductor-Metal Photodetectors with Sub-100-Nm finger Spacing and Finger Width in GaAs,

Abstract

We have fabricated metal-semiconductor-metal photodetectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measurement shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 TH2.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007648

Entities

People

  • Paul B. Fischer
  • Stephen Y. Chou
  • Yue Liu

Organizations

  • University of Minnesota

Tags

DTIC Thesaurus Topics

  • Electronics
  • Metal-Semiconductor-Metal Photodetectors
  • Monte Carlo Method
  • Optoelectronic Devices
  • Optoelectronics
  • Photodetectors
  • Picosecond Time
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space