Theoretical Model of the Photon Transport Transistor,
Abstract
A theoretical model for the photon transport transistor (P.T.T.) is developed, based on a set of rate equations. With this model the small signal differential current gain Beta (Beta = dI sub c/dI sub b) is calculated and compared with measurement results. Our model confirms that the differential current gain is dominated at low carrier densities by the spontaneous emission. It then decreases once stimulated emission becomes dominant and finally collapses to a small value at the lasing threshold carrier density. We were able to quantify the non-radiative carrier recombination lifetime, which for our experimental results was found to be 300 ns, and the scattering loss in the waveguide, which amounts to 2.7/cm for an assumed total waveguide loss of 5/cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007655
Entities
People
- A. K. Chu
- B. Van Zeghbroeck
- Y. Gigase
Organizations
- University of Colorado Boulder