Numerical Simulations of an Actively Q-Switched Semiconductor Laser,
Abstract
In this work, the travelling-wave rate-equations have been used to numerically simulate the performance of an actively Q-switched GaAs/AlGaAs twin-electrode laser. For modulation frequencies from 1.0 to 3.0 GHz optical output pulses of 20 - 23 ps were obtained. The calculated results of this model have been compared with experimental results and good agreement was found. The computer model is versatile, easy to implement on a small PC-type computer, and it can, without any modifications, be used to simulate the dynamic behavior of a large variety of optoelectronic devices. Hence, we believe that the travelling-wave rate equations can be an important tool for simulating ultrafast pulse generation in optoelectronic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007666
Entities
People
- Bjoern Jonsson
- Sverre T. Eng
Organizations
- Chalmers University of Technology