Temperature Dependence of the Resonant Tunneling Process,

Abstract

We use differential absorption spectroscopy to investigate the temperature dependence of the accumulated charge in a resonant tunneling diode. We find that the charge density is approximately constant between 10-300K, and that the electrons are thermalized with the lattice at all temperatures.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007671

Entities

People

  • A. Yacoby
  • D. S. Chemla
  • I. Bar-joseph
  • T. K. Woodward
  • Y. Gedalyahu

Organizations

  • Weizmann Institute of Science

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption
  • Charge Density
  • Diodes
  • Electronics
  • Electrons
  • Optoelectronics
  • Picosecond Time
  • Power Electronics
  • Quantum Tunneling
  • Resonant Tunneling Diodes
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Spectroscopy
  • Tunnel Diodes
  • Tunneling

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene