Competition Between Tunneling and Exciton Formation for Photoexcited Carriers in Asymmetric Double Wells,
Abstract
The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross-correlation technique, a bi-molecular formation coefficient of 6xlO-12cm2/ps is determined. The electron and hole tunneling times are also simultaneously obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007673
Entities
People
- J. Kuhl
- K. Koehler
- R. Eccleston
- R. Strobel