Strained-Layers for Electronics and Optoelectronics,

Abstract

The strain associated with intentionally lattice mismatched (strained-layer) heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007675

Entities

People

  • David R. Myers

Organizations

  • Sandia National Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Electronics
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Optoelectronics
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics