Characterizations of Terahertz Optoelectronic Behavior of GaAs Epilayers Containing Arsenic Precipitates,

Abstract

Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic teraHz beam system, we have generated and detected freely propagating, subpsec electromagnetic pulses. The As precipitates occur as a result of epi-growth at 250 C followed by a 600 C. anneal, yielding a high-quality, epitaxial matrix essentially free of point defects.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007676

Entities

People

  • A. C. Warren
  • D. Grischkowsky
  • J. M. Woodall
  • M. R. Melloch
  • N. Katzenellenbogen

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Crystals
  • Electromagnetic Pulses
  • Electronics
  • Engineered Materials
  • Materials
  • Nanocrystals
  • Nanomaterials
  • Optical Materials
  • Optoelectronics
  • Picosecond Time
  • Point Defects
  • Precipitates

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics