Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs,

Abstract

We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007677

Entities

People

  • T. B. Norris
  • W. J. Schaff
  • W. Sha
  • X. J. Song
  • Z. Lillental-weber

Organizations

  • University of Michigan

Tags

DTIC Thesaurus Topics

  • Absorption
  • Crystals
  • Dynamics
  • Electronics
  • Epitaxial Growth
  • Low Temperature
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanocrystals
  • Nanomaterials
  • Optical Materials
  • Optoelectronics
  • Picosecond Time
  • Spectroscopy
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology