Comparison of Oxygen Ion- and Proton-Implanted GaAs Photoconductive Switches,

Abstract

Oxygen ion and proton implanted GaAs photoconductive (PC) switches which can be used for on-wafer characterization of GaAs MMIC's have been evaluated. The Oxygen switch performed better in terms of switch sensitivity and bandwidth. It has been used to measure the S-parameter of a 3 stage 12 GHz MMIIC amplifier. A good agreement between the PC sampling technique and the network analyzer was achieved up to a 40 db dynamic range.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007678

Entities

People

  • Chihhi Lee
  • Eve A. Chauchard
  • Sheng-lung L. Hung
  • Thane Smith
  • Timothy T. Lee

Organizations

  • University of Maryland

Tags

DTIC Thesaurus Topics

  • Agreements
  • Amplifiers
  • Analyzers
  • Bandwidth
  • Dynamic Range
  • Electronics
  • Optoelectronics
  • Picosecond Time
  • Sampling
  • Sensitivity

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Microwave Engineering.
  • Semiconductor Device Technology