Femtosecond Refractive and Absorptive Nonlinearities Due to Real Carriers in GaAs,
Abstract
The optical properties of gallium arsenide continue to attract interest because of the development of electro-optical and all-optical devices made of III-V semiconductors. The study of ultrafast changes in optical constants (both absorption coefficient and refractive index) is especially important for developing high-speed and high-bit-rate devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007679
Entities
People
- P. M. Fauchet
- Tao Gong
Organizations
- University of Rochester