Microwave Joining of Si SiC Al Si SiC,
Abstract
Microwave energy is used to join high dielectric loss Si-SiC to Si-SiC with Al foil as an interlayer. Rapid heating with moderate applied pressure has led to excellent bond strength in a short time. The joining was successfully achieved in about 5 minutes at 1250 deg C and 1.2 MPa axial pressure in a single mode microwave cavity without damaging the samples. The joined specimen interfaces were examined using optical microscopy and scanning electron microscopy. The diffusion paths of Al were also detected with electron microprobe image mapping. Average fracture strength of the joined specimen was shown to be comparable to the original material strength using the four point bending fracture test. Comparison of Weibull plots for original and joined Si-SiC has also verified the high strength at the Si-SiC/Al/Si-SiC interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 27, 1992
- Accession Number
- ADP007764
Entities
People
- J. C. Conway
- T. Y. Yiin
- V. K. Varadan
- V. V. Varadan
Organizations
- Pennsylvania State University