High Contrast Photonic Gate Arrays Consisting of Vertically Integrated Multiple-Quantum-Well Reflection Modulators and Phototransistors,
Abstract
Given their extremely high-speed capability, optical logic gates based on the quantum confined Stark effect (QCSE)1 of multiple-quantum-well (MQW) structures are highly promising as basic devices for photonic signal processing. Although a number of schemes have been demonstrated including Symmetric Self Electro-optic Effect Devices (S-SEED)2, the contrast ratios usually obtained are insufficient due to the short modulation path. We have developed novel photonic gate arrays consisting of vertically integrated GaAs/AlGaAs MQW reflection modulators and GaAs/AlGaAs heterojunction phototransistors (HPT). They operate as NOR gates with high contrast ratio and optical gain.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007823
Entities
People
- Chikara Amano
- Shinji Matsuo
- Takashi Kurokawa
Organizations
- NTT, Inc.