Low Driving Voltage and Low Chirp InGaAs/InAlAs MQW Electro-Absorption Modulator,

Abstract

With the progress of the ultra high-bit rate optical transmission system, there has been much interest in the InGaAs/InAlAs MQW electro-absorption (EA) modulators because of their wide bandwidth and high modulation efficiency around 1.55um wavelength. However, the modulator should be not only high-speed and low-driving voltage but low loss and low chirp for the practical use. In this paper, we analyze the absorption layer thickness dependence of the modulation characteristics for the InGaAs/InAlAs MQW EA modulators. From the analysis, the new device structure and experimental results of low driving voltage and low chirp MQW EA modulator for 10Gb/s transmission are demonstrated.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007831

Entities

People

  • Hiroaki Inoue
  • Hirohisa Sano
  • Koji Ishida
  • Shigehisa Tanaka
  • Shoichi Hanatani

Organizations

  • Hitachi

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Bandwidth
  • Efficiency
  • Electro-Absorption Modulators
  • Modulation
  • Modulators
  • Optical Modulators
  • Optoelectronic Devices
  • Optoelectronics
  • Thickness

Readers

  • Optical Physics and Photonics.