Surface-Emitting-Laser Operation and Optical Switching Characteristics in Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity (VC-VSTEP),
Abstract
The advantage of optical interconnections over electronic interconnections is that they are free of mutual interference and require no capacitive charging. The development of low power consumption optical functional devices has led to the possibility of 2-D optical functional interconnections. One of these devices, which can serve as an optical switch, an optical memory and an optical logic device, is the AlGaAs/GaAs based Vertical to Surface Transmission Electro-Photonic Device (VSTEP). Although these devices can be in either light-emitting-diode form and edge-emitting laser diode form, they cannot satisfy both high conversion efficiency and compact configuration found in the VCSELs. Another problem is the non-transparency of the substrate which causes light input and output to be directed only from the top. In this paper, we report on the first surface emitting laser operation in VSTEPs with a vertical cavity (VC-VSTEPs) and on its optical switching characteristics with strained quantum well thin(1OOA) InGaAs active layers used as absorption layers when off. Significantly shorter optical write-in time than that of the LED-mode VSTEP has been achieved. One resultant problem is that the thin absorption layers may cause reduced absorption efficiency. This could be solved through absorption enhancement using multiple reflection mirrors for lasing.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007840
Entities
People
- H. Kosaka
- I. Ogura
- K. Kasahara
- M. Sugimoto
- T. Numai
Organizations
- NEC