Band Gap Renormalization in Quantum Confined Semiconductor Systems,
Abstract
The band gap renormalization (BGR) at high carrier densities is a many-body effect which has been studied intensively in the past for bulk semiconductor materials. The renewed inter in the BGR issue is stimulated by measurements on systems of reduced dimensionality like quantum wells or inversion lay A careful lineshape analysis of optical experiments is needed to extract reasonable BGR values. Interestingly enough these studies have revealed that the different sublevels do not shift at the same amount. This can be traced back to the well-documented non-rigid shift of the energy bands in the bulk since increasing sublevel numbers refer to increasing momentum in the growth direction.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007845
Entities
People
- R. Zimmerman