Growth and Performance of GaInP/A1GaInP Visible Light Emitting Laser-Diodes,
Abstract
The quaternary alloy Al(x)Ga(l-x-y)In(y)P has the largest direct bandgap next to the nitrides among all III-V compound semiconductors (1). This alloy can be grown lattice matched to a GaAs substrate ( y- 0.5 ) and spans at room temperature a direct bandgap ranging from 1.85 eV ( for x=O to about 2.25 eV ( for x=0.3 ) at the gamma - X cross over. To date the organometallic vapour phase epitaxy OMVPE technique has been demonstrated to be the most suitable growth technique for the AlGaInP alloy (2). High quality GaInP and AlGaInP bulk layers have been produced using low pressure OMVPE.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007847
Entities
People
- Ad Valster
- Gerard A. Acket