Valence Band Structures of a Strained Quantum Well and Applications to Semiconductor Lasers,

Abstract

Strain effects in quantum wells have been intensively investigated for applications to semiconductor lasers, photodetectors and electronic devices such as pseudomorphic high electronic mobility transistors. High quantum efficiency, high power (70 mW CW and 180 mW pulsed operation), modulation-doped In0.8Ga0.2As strained-layer (compression) quantum-well lasers emitting at 1.5 um wavelength have been reported. A record high power output (206 mW CW) strained-layer InGaAs/InP quantum-well laser emitting at 1.48 to 1.51 um using the effects of tension strain has been demonstrated. A very low threshold (92 A/cm2) strained-layer quantum-well laser at 1.6 um has also been obtained.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007854

Entities

People

  • Calvin Y. P. Chao
  • Shun-lien Chuang

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Energy Bands
  • Lasers
  • Optoelectronics
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing