High-Contrast Electron-Transfer GaAs/A1GaAs Multiple Quantum Well Waveguide Modulator,
Abstract
In this paper, we present the first demonstration of the barrier reservoir and quantum well electron transfer structure (BRAQWETS) concept in the GaAs/AlGaAs material system. The BRAQWETS uses an applied voltage (Vapp) to transfer electrons from the highly doped reservoir region to a quantum well, blue shifting the absorption edge in the quantum well due to bandfilling. Waveguide modulators with a 5 BRAQWETS active core exhibit contrast ratios as high as 75:1 in a 490 um-long device. We show how the operation and performance of the device can be understood in terms of the voltage-induced changes in the BRAQWETS energy band diagram and the corresponding photocurrent spectra.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007859
Entities
People
- J. E. Zucker
- M. Divino
- N. J. Sauer
- O. Blum
- T. Y. Chang