A High contrast, Low Insertion Loss Asymmetric Fabry Perot Modulator Operating at 4.1 Volts,
Abstract
A very high contrast (>2OdB), low insertion loss ( 3.3dB) GaAs/AlGaAs multiple quantum well (MQW) reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asymmetric Fabry-Perot (FP) cavity. The back mirror of the FP cavity was formed using an integrated quarter wave reflector stack and exhibited a reflectivity of >95%. The front mirror was the natural air-semiconductor interface with a reflectivity of -30%. A reduction of the operating voltage, aiming at a high contrast, low insertion loss modulator is addressed in this paper.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007861
Entities
People
- A. Rivers
- G. Parry
- M. Whitehead
- P. Zouganeli
- P.j. Stevens
Organizations
- University College London