Headband GaAs/A1(x)Ga(1-x)As Multi-Quantum Well LED,
Abstract
A high power LED source has been designed and fabricated which allows broad band emission to be achieved over the wavelength range 700-900nm with low spectral ripple. The design is based on a GaAs/AlxGal-xAs multi-quantum wells active region where each well is designed to emit at a different peak wavelength. The superposition of the emission spectra of the individual wells produces a broad band spectrum with many times the spectral width of a bulk device with a single active composition, which is typically 40nm. This is a candidate source for sensor applications such as analogue spectral filtering, in which broadband emission over - 100-200nm is typically required.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007863
Entities
People
- A. J. Moseley
- C. Meaton
- D. J. Robbins
- R. M. Ash
- R. Nicklin