External-Cavity Surface-Emitting InGaAs/InP MQW Laser:High Powers and Subpicosecond Pulses,
Abstract
We have demonstrated an external-cavity surface-emitting semiconductor laser (EX-SEL), obtaining pulses as short as 710 fsec and peak powers as high as 64 W (after compression). A surface-emitting semiconductor laser (SEL) lacks the beam quality problems associated with cleaved-cavity lasers, and can be used to generate high output powers. Previous work with a SEL has produced 120 mW of CW power. Gain-switching of a SEL has yielded 3.9 psec pulses 2. To produce shorter pulses, mode-locking in an external cavity has been proved to be advantageous. For example, an external-cavity edge-emitting laser produced 580 fsec pulses at average powers of 1.4 mW 3. Hybrid mode-locking techniques combined with amplification and pulse-compression have resulted in 560 fsec pulses, average powers of 6.5 mW, and peak powers of 38 W 4. This paper describes mode-locking of an SEL in an external cavity.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007873
Entities
People
- H. Iwamura
- S. R. Friberg
- W. B. Jiang
- Yoshihisa Yamamoto
Organizations
- NTT, Inc.