The Temperature Dependence of the Resonant Tunneling Process,
Abstract
The nature of a resonant tunneling process that involves inelastic scattering events is of a wide interest lately. In this paper, we investigate the influence of inelastic scattering by measuring the tunneling characteristics at various temperatures. We show that the stored charge and the transit time are not sensitive to a large temperature change. We used a symmetric double barrier diode under electric bias to study the electrons tunneling process. Our sample was composed of two 70A InAlAs barriers and a 45A InGaAs well between them. The zero bias Fermi energy in the emitter and collector was 55 meV. A more detailed description of the sample is given at ref(4).
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007880
Entities
People
- A. Yacoby
- D. S. Chemla
- I. Bar-joseph
- T. K. Woodward
- Y. Gedalyahu
Organizations
- Weizmann Institute of Science