Normally-On and Normally-Off Asymmetric Fabry-Perot Reflection Modulators Produced by Impurity Free Disordering,
Abstract
In this paper we demonstrate, for the first time, that impurity free vacancy diffusion (IFVD) can be applied to the post-growth fabrication of normal incidence devices, specifically asymmetric Fabry-Perot reflection modulators (AFPM) made from GaAs/AlGaAs multiple quantum well (MQW) material. From the same wafer we have successfully produced both normally-off and normally-on devices, by achieving blue shifts of up to 52meV (30nm) and maintaining clearly resolved heavy and light hole excitons. The results are significant for optoelectronic integrated circuit (OEIC) applications, where monolithic integration of devices performing different functions will be required.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007886
Entities
People
- G. Parry
- Gary J. Hill
- J. S. Roberts
- M. Ghisoni
- M. Pate
Organizations
- University of London