Fast Escape of Photocreated Carriers out of Shallow Quantum Wells,
Abstract
Recently, strong and well-resolved excitons have been observed in the room-temperature absorption spectra of shallow GaAs/AlxGal-xAs quantum wells for values of x as low as 0.02.1 In addition, these shallow quantum wells exhibit strong electroabsorption at low electric fields applied perpendicular to the layers. This pronounced electroabsorption effect at low biases is caused by both the red-shift of the exciton as observed for deeper quantum wells and the fact that the low AlxGal-xAs barriers cannot prevent the field-ionization of the exciton, hence giving field-induced broadening.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007888
Entities
People
- A. M. Fox
- D. A. B. Miller
- J. E. Cunningham
- J. Feldmann
- K. W. Goossen