Femtosecond Time-Resolved Studies of High-Field Parallel Transport in GaAs Quantum Wells,
Abstract
Ballistic transport of electrons in semiconductors has recently been a topic of great interest. These studies are important because ballistic transport is expected to play a role in the operation of a number of state-of-the-art semiconductor devices. Ballistic drift in a field-free region of electrons launched across a heterojunction has been observed. In this paper we describe experiments that apply optical spectroscopy to time-resolve the distribution functions of electrons in the presence of a strong electric field applied in the plane of a MQW structure. The carriers are injected with zero initial kinetic energy by a short laser pulse. The exciton field-ionization, electron quasi-ballistic acceleration, field-induced heating, and real-space transfer of electrons into the barrier region of the MQW are observed by monitoring the carrier distribution function using femtosecond-pump continuum-probe techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007889
Entities
People
- T. B. Norris
- W. J. Schaff
- W. Sha
Organizations
- University of Michigan