Silicon Atomic Layer Growth by Laser Beam/Si2H6 Adsorbates Interactions,
Abstract
Saturated monomolecular adsorption of Si2H6 on a silicon surface held at temperatures around -60 deg C and subsequent irradiation of a single shot of ArF excimer laser fully decomposes the adsorbed layer to promote the atomic layer growth of Si. TEA CO2 laser irradiation at 1OP6 line, which selectively excites the surface SiH3 bond, significantly reduces the content of the bonded hydrogen in the silicon layer. Possible mechanisms for the silicon atomic layer growth and the hydrogen reduction are also discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007910
Entities
People
- M. Hirose
- S. Miyazaki
- Tomoyuki Tanaka
- Y. Nagasawa
Organizations
- Hiroshima University