Adsorption and Desorption Kinetics for Si(Csub 2 H sub 5)Sub 2 H sub 2 on Si(111) 7x7,

Abstract

Diethylsilane (DES), Si(C2H5)2H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for Si(C2H5)2H2 on Si(111) 7x7 using laser induced thermal desorption (LITD) and temperature programmed desorption (TPD) technique.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007916

Entities

People

  • M. L. Wise
  • P. A. Coon
  • S. M. George

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Adsorption
  • Atomic Layer Epitaxy
  • Critical Temperature
  • Desorption
  • Epitaxial Growth
  • Glass Transition Temperature
  • Kinetics
  • New Mexico
  • Sorption
  • Transition Temperature

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy