Reflection Electron Energy Loss Spectroscopy during Molecular Beam Epitaxy,

Abstract

Modern epitaxial crystal growth techniques have made it possible to tailor compositionally modulated thin films on an atomic level. However, further progress in control of epitaxial growth is limited by a relative lack of useful in situ techniques for surface analysis during growth. The most widely used in situ structural analysis technique for molecular beam epitaxial (MBE) growth is reflection high energy electron diffraction (RHEED). Its long working distance and high data rate have prompted investigations of RHEED oscillations and other RHEED dynamic features by many groups. However, there is currently no widely employed in situ chemical analysis technique that has the advantages of RHEED. Hence, for example, the ability to perform real-time control of alloy composition in epitaxial films is limited.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007931

Entities

People

  • C. C. Ahn
  • Harry Atwater
  • S. Nikzad

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Analysis
  • Crystal Growth
  • Crystals
  • Data Rate
  • Diffraction
  • Electron Diffraction
  • Electron Energy
  • Electrons
  • Epitaxial Growth
  • High Energy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • New Mexico
  • Structural Analysis
  • Surface Analysis
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene