Formation of Submicrometer Carbonaceous Islands during SEM Examination of Thin GaAs Layers on Si Substrates,
Abstract
In the course of investigating the initial stages of GaAs growth on Si substrates by molecular beam epitaxy (MBE), we have discovered an electron-beam-induced growth process that can occur during scanning electron microscope (SEM) examination of samples with a sufficiently thin deposit of GaAs. When such a sample is transferred from the MBE system to the SEM with only a brief exposure to air, a circular island forms at any location on the surface where the SEM electron beam is allowed to dwell. The diameter of such islands increases from about 500 to 2500 A as the dwell time is increased from about 1 min to over 10 min. Carbon was the only element detected when the islands were analyzed by an Auger microprobe after surface contamination was removed by sputtering.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007935
Entities
People
- G. W. Turner
- P. M. Nitishin
Organizations
- Massachusetts Institute of Technology