Doping Distributions in III-V Semiconductors,

Abstract

Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage (C-V) profiling and secondary ion mass spectrometry (SIMS), are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007967

Entities

People

  • E. F. Schubert

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Compound Semiconductors
  • Integrated Circuits
  • Mass Spectrometry
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Spectrometry
  • Spectroscopy

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics