Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy,

Abstract

Selective area growth is used in the fabrication of Si epitaxial devices such as bipolar transistors. This growth technique facilitates the preparation of very complex self-aligned and buried transistor structures. Selective growth has been investigated in the III-V materials, without, however, any significant results pertaining to the optical or electrical quality of the material grown, or device results. In this work, we investigate selective growth of InP and GaInAs on S'02-masked InP substrates using metalorganic molecular beam epitaxy (MOMBE). Group Ill and V elements are derived from triethylgallium and trimethylindium, and AsH3 and PH3 respectively. Excellent selectivity is achieved in the temperature range from 5 10 to 540 deg C.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007970

Entities

People

  • A. Feygenson
  • D. Ritter
  • J. S. Weiner
  • R. A. Hamm
  • Y. L. Wang

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Epitaxial Growth
  • Fabrication
  • Integrated Circuits
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology