Application of Migration-Enhanced Epitaxy to Novel Semiconductor Structures,
Abstract
Enhanced surface migration is essential to the growth of high quality epitaxial layers. In the growth of III-V compound semiconductors, surface migration is effectively enhanced by supplying group Ill atoms to the growing surface in the absence of group V atoms or molecules. In this situation, the lifetime of isolated group Ill atoms, which are quite mobile on the growing surface, is greatly increased resulting in these atoms migrating a large distance during growth. Migration-enhanced epitaxy (MEE) is based on this characteristic. MEE has proved useful for growing flat heterojunctions and for lowering the epitaxial growth temperature of III-V compound semiconductors. This paper describes the principle of MEE and its application to the growth of novel semiconductor structures such as GaAs/AlAs horizontal superlattices, ZnSe/GaAs superlattices, and (GaAs)l-x(Si2)x,/GaAs superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007972
Entities
People
- H. Yamaguchi
- N. Kobayashi
- S. Ramesh
- T. S. Rao
- Y. Horikoshi
Organizations
- NTT, Inc.