Photoluminescence from InGaAs/InGaAsP Quantum Wires Fabricated by Ga Focused Ion Beam,

Abstract

Low dimensional structures such as quantum wires and boxes are one of the interesting subjects. Up to date, various microstructures have been fabricated and characterized by various methods. Focused ion beam (FEB) is one of the useful methods because this method makes it possible to modify, deposit and etch various materials in desired pattern. In this paper, we report fabrication of InGaAs/InGaAsP quantum wires by Ga FICB. The properties of quantum wires were investigated by photoluminescence (PL) method.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007975

Entities

People

  • H. Asahi
  • J. Takizawa
  • S. Gonda
  • S. J. Yu
  • Seungchan Kim

Organizations

  • Osaka University

Tags

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Integrated Circuits
  • Ion Beams
  • Ions
  • Materials
  • Metal Oxide Semiconductors
  • Microstructure
  • Optoelectronic Devices
  • Photoluminescence
  • Quantum Wires
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing