Infrared Characterization of Compound Semiconductors,
Abstract
As the band gaps of semiconductors are increasing, there are more and more problems to achieve large doping levels and good ohmic contacts to measure the carrier concentrations N and mobilities micron by Hall effect. On the other hand, as the devices structures contain more and more layers, in situ control at each processing step becomes more and more necessary. A solution of both problems might be contactless determination of N and u from infrared (IR) reflectivity. In the following, we give the physical and analytical bases of such determinations, and show examples of derivation of 'optical' N and micron on bulk GaAs and thin films of ZnSe.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007976
Entities
People
- A. Deneuville
Organizations
- University of Florida