Study of Epitaxial Growth by UHV-SEM and RHEED-TRAXS,

Abstract

RHEED-TRAXS method has high sensitivity for the surface elementary analysis. Applying this method we studied the surface composition during adsorption and epitaxial growth processes of InSb/Si(100) and Ge/Sn/Ge(111) systems. We have developed a new UHV-SEM which has a high resolution of about 5 A. We found that by using the UHV-SEM we can observe directly the domain contrasts from the two dimensional surface structures such as 7x 7, 5x 2Au,3x 3-Ag which are formed on Au,Ag/Si(111) system.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007979

Entities

People

  • Shozo Ino

Organizations

  • University of Tokyo

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Circuits
  • Compound Semiconductors
  • Contrast
  • Electronics
  • Epitaxial Growth
  • Fabrication
  • High Resolution
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Optoelectronic Devices
  • Semiconductors
  • Sensitivity
  • Solid State Electronics
  • Two Dimensional

Readers

  • Library and Information Science/ Studies, Southeast Asia Studies, Bibliography of Vietnam and Lao Studies.
  • Materials Science and Engineering.
  • Semiconductor Device Technology