Ga0.47In0.53As/InP Multiquantum Well Structures Observed by Scanning Tunneling Microscopy under Ultrahigh Vacuum,

Abstract

Multiquantum wells (MQW's) are being widely applied to various electronic and optoelectronic devices. It is of vital importance to characterize MQW structures such as period, uniformity of barrier and well layers and abruptness of hetero-interfaces as exactly as possible. A scanning tunneling microscope (STM) is considered as a useful tool to observe MQW structures with a high resolution. However, only a few data on this issue have been reported.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007981

Entities

People

  • Fukunobu Osaka
  • Ichiro Tanaka
  • Shunsuke Ohkouchi
  • Takashi Kato

Organizations

  • NTT, Inc.

Tags

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Electronics
  • Fabrication
  • High Resolution
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Microscopes
  • Microscopy
  • Optoelectronic Devices
  • Quantum Tunneling
  • Scanning
  • Semiconductors
  • Tunneling
  • Ultrahigh Vacuum
  • Vacuum

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene