Characterization of Strained Heterostructures by Cathodoluminescence,

Abstract

Cathodoluminescence (CL) provides information about the local variation of the defect structure, the impurity incorporation and the electronic bandstructure of semiconductor layers which might be buried below the surface. It is particularly useful for the non-destructive characterization of device structures. In this paper we review some of recent results on strained layer structures. As model systems we investigate In0.23Ga0.77As/GaAs-, InP/Si- and locally deposited GaAs/Si-layers.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007982

Entities

People

  • D. Bimberg
  • Jennifer Blain Christen
  • M. Grundmann

Tags

DTIC Thesaurus Topics

  • Cathodoluminescence
  • Circuits
  • Compound Semiconductors
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Heterojunctions
  • Impurities
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics