Lateral Field Effect in Focused-Ion-Beam Written in-Plane-Gated Systems,
Abstract
The present technology of microstructured devices is based on lithographic processes, which use masks and photoresist layers. The power of this techniques is the parallel production of many structures in a chip unit and many chip units on a wafer in a single run, once the complex masks have been fabricated. However, there are two essential inconveniences inherent to this technology: First, one needs not one, but several complex masks, which have to be precisely aligned with the permanent risk of contamination with particles. Second, all resist processes are indirect ones, i.e. the resist pattern serves as a further mask for subsequent etching or implantation steps, also sensitive to contamination on a rough as well as on a submicron scale. For this reason, it is highly desirable to fabricate semiconductor microstructures with a minimum number of process steps.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007986
Entities
People
- A. D. Wieck
- Audrey Fischer
- K. Ploog