ECR Plasma Etching of III-V Optoelectronic Devices,
Abstract
The dry etching of GaAs, InP and related compounds is gaining a resurgence of interest, largely due to the need to achieve high resolution, anisotropic etching in device applications. There are a variety of requirements of this etching, such as fast etch rate for creation of deep (greater than or equal to 1 um) trenches, high selectivity for one material over another (say GaAs over AlGaAs) or conversely equi-rate etching for these materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007989
Entities
People
- S. J. Pearton