Sulfur Passivation of GaAs Surfaces,

Abstract

Passivation of GaAs (100) surfaces with chemical solutions containing P2s5 has been studied using photoluminescence, electrical tests(I-V, C-V), Auger electron and X-ray photoelectron spectroscopies, and scanning electron microscopy. The time stability of the interfacial passivation was a particular concern, and passivation protocols were developed to prolong the effects. The lifetime of passivation at contact interfaces were studied in particular. In addition, techniques to improve the uniformity of passivation and reduce surface morphology in the contact area have been developed.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007994

Entities

People

  • Paul H. Holloway
  • Yun Wang

Organizations

  • University of Florida

Tags

DTIC Thesaurus Topics

  • Auger Electrons
  • Electron Microscopy
  • Electrons
  • Integrated Circuits
  • Microscopy
  • Optoelectronic Devices
  • Photoelectrons
  • Scanning Electron Microscopy
  • Semiconductors
  • Spectroscopy
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Petroleum Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene