Direct Observation of GaAs Surface Cleaning Process Under Hydrogen Radical Beam Irradiation,

Abstract

Recently dry etching techniques have been adopted for surface cleaning of III-V compound semiconductors. The effectiveness of hydrogen (H) radical beam produced by electron cyclotron resonance (ECR) plasma for low-temperature surface cleaning has been successfully demonstrated. Removal of oxygen contamination on the GaAs substrate has been performed by H radical beam irradiation. This radical beam, which consists of only neutral radicals, is supposed to be free from surface damages caused by ion bombardment. Although the deoxidation of the native oxide layer resulting from the introduction of the H radical has been attributed as the factor leading to the removal of the oxygen contamination, there has yet to be any direct observation of such a chemical reaction.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP007995

Entities

People

  • Hiroshi Iwata
  • Kiyoshi Asakawa

Organizations

  • NEC

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Compound Semiconductors
  • Contamination
  • Cyclotron Resonance
  • Dry Etching
  • Etching
  • Fabrication
  • Hydrogen
  • Integrated Circuits
  • Ion Bombardment
  • Low Temperature
  • Observation
  • Optoelectronic Devices
  • Resonance
  • Semiconductors
  • Silicon Carbide

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene