Indium Ohmic Contacts to n-ZnSe,
Abstract
The reaction between an indium overlayer and high purity MBE grown n-ZnSe chlorine doped ( 2xlOl8 CM-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, Xray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V) . Good ohmic contacts were formed after annealing at 250 deg C or 300 deg C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in formation of the contact. These effects must be considered for successful formation of the ohmic contact.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007998
Entities
People
- Paul H. Holloway
- Y. X. Wang
Organizations
- University of Florida