Open Tube Double Diffusion for the Fabrication of Bipolar Transistor Waveguide Optical Switch,
Abstract
Experimental results of a new method for the double diffusion into GaAs in an open tube have been presented. New techniques developed for the low concentration Zn diffusion at relatively higher values of the temperature and high concentration Sn diffusion in an open tube system can be convenient for the fabrication of bipolar transistor waveguide optical switches and other self-aligned bipolar devices needed for photonic integrated circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP007999
Entities
People
- D. K. Gautam
- K. Tada
- Y. Nakano
Organizations
- University of Tokyo