Full-Wafer Technology for Laser Fabrication and Testing,
Abstract
Full-wafer fabrication of AlGaAs lasers, which have mirrors etched by chemically assisted ion-beam etching and passivated by ion-beam sputtered AI2O3, is described. Full-wafer testing techniques for both laser parameters (P-1, far-field, spectrum, TO), as well as other test sites for process development and control (critical dimensions, overlay, etch depths, sheet resistances) have been developed. The lasers have excellent beam quality, with an rms phase-front distortion (BAIA) of less than 0.04. Operation in a single transverse mode at output powers up to about 50 mW and catastrophic optical damage thresholds of about 120 mW have been demonstrated. Full-wafer testing of 1400 lasers with a yield of functioning lasers of over 90%, and with good uniformity of P-I characteristics over a wafer will be shown. These fabrication and testing techniques are being developed with the aim both of improving the fabrication of discrete lasers, and of laying the basis for future developments towards optoelectronic integration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008000
Entities
People
- D. J. Webb
- G. L. Bona
- M. K. Benedict
- N. Cohoon
- P. Buchmann
Organizations
- International Business Machines Corporation (Armonk, NY)