Epitaxial Liftoff Technology for OEIC's,
Abstract
Epitaxial liftoff permits the integration of III-V films and devices onto arbitrary material substrates. This paper will review Bellcore's work on optoelectronic integration of III-V optical transmitter and receiver devices onto LiNbO3, glass, Silicon and sapphire substrates. In the field of electronic materials there has been a persistent interest in the integration of high quality epitaxial thin film semiconductor layers with arbitrary crystalline or glass substrates. For example, thin film GaAs layers on crystalline Silicon substrates would allow the combination of the two technologies. This has led to a massive effort on lattice mis-matched heteroepitaxial growth. Recently, however, a new and more flexible approach has been attracting increasing attention.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008002
Entities
People
- A. Yi-yan
- E. Yablonovitch
- W. K. Chan