Submilliampere-Threshold Multi-Quantum-Well AlGaAs Lasers and Their Integration of More Than 100 Lasers,
Abstract
Extremely low threshold lasers are very much in demand for opt-electronic integrated circuits (OEICs), such lasers can realize dreams of optical parallel processing systems and optical computing, because very dense integration of optical devices requires low heat generation and low electric power consumption. Recently, submilliampere lasers have been reported from several laboratories, but these lasers require high-reflection facet coating, which prevents high light output power. The lowest threshold current achieved with an uncoated device had been 1.8mA under pulsed operation and 2.5mA under continuous wave (CW) operation. We have developed a new type buried heterostructure (BH) laser using single-step MOCVD on a nonplanar GaAs substrate. Our laser has the lowest threshold current value of 0.88mA and the highest energy conversion efficiency of 42% at lmW/facet at room temperature (RT) under CW conditions without facet coating. Then we have fabricated 102 laser arrays and realized their uniform operations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008003
Entities
People
- Hironobu Narui
- Shoji Hirata
- Yoshifumi Mori
Organizations
- Sony Group