Fabrication of GaAlAs/GaAs Single Quantum Well Gain-Coupled Distributed Feedback Lasers,
Abstract
The gain-coupled distributed feedback (DFB) semiconductor laser is regarded as a promising light source for applications such as optical communication and optical measurement, because of its unique features such as complete single longitudinal mode property, immunity to facet reflection, and resistance to external optical feedback. The introduction of the quantum well structure to the gain-coupled DFB laser is thought to bring further advantages. We are trying to fabricate gain-coupled DFB lasers with a single quantum well (SQW) active layer. In this paper, we report the preliminary experiment on the fabrication procedure and the characteristics of the SQW gain-coupled DFB laser.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008005
Entities
People
- H. Hosomatsu
- H. L. Cao
- M. Dobashi
- Y. Nakano
- Yi Luo
Organizations
- University of Tokyo