Fabrication of GaInAs(P)/InP Quantum-Wire Structures for Lasers and Electro-Optical Devices,
Abstract
Realization of high performance optical devices based on lower dimensional electron systems in quantum-well structures essentially requires two key technologies, an ultra-fine lithography including an etching process and a growth of quality crystals on a patterned substrate, even though there are several methods reported to obtain those devices. We reported a lasing action of GaInAs/InP quantum-wire (10nm thick, 30nm wide) lasers at 77K fabricated by employing an EBX direct writing, a wet chemical etching, and an OMVPE regrowth. However the threshold current was too high to operate at room temperature due to poor regrown interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008008
Entities
People
- Shigehisa Arai
- Yasuharu Suematsu
Organizations
- Tokyo Institute of Technology