Polarization Controlled Semiconductor Photonic Devices by Strained-Barrier Superlattice Structures,
Abstract
Strained layer superlattice (SLS) structures offer excellent versatility for tailoring different energy-band structures 1),2). For example, the difference between TE and TM modes can be readily controlled by selecting layer lattice parameters to produce tensile strain in the structures). This approach can be exploit to fabricate polarization-insensitive amplifier with high gain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008009
Entities
People
- K. Magari
- M. Okamoto
- Y. Itaya
Organizations
- NTT, Inc.